AlGaN/GaN 120W WCDMA Doherty Amplifier with Digital Pre-Distortion Correction

Author

Poulton, M.J. ; Leverich, W.K. ; Garber, P. ; Shealy, James B. ; Vetury, Rama ; Brown, J. David ; Green, Daniel S. ; Gibb, S.R. ; Choi, D.K.

Author_Institution

Infrastructure Products Group, RF Micro Devices, Charlotte, NC

fYear

2006

fDate

4-5 Dec. 2006

Firstpage

1

Lastpage

3

Abstract

The design of a 120W 2.1GHz AlGaN/GaN Doherty amplifier optimized for maximum efficiency is reported. Compared with a class AB PA using the same device technology, the gallium nitride (GaN) Doherty amplifier provides up to 7% improvement in drain efficiency at 3dB back-off (BO) from maximum power. Using digital pre-distortion (DPD) with crest reduction, 45% drain efficiency at 47dbm output power at -45dBcACLR was observed for a single carrier 64 DPCH WCDMA signal.

Keywords

aluminium compounds; code division multiple access; gallium compounds; microwave power amplifiers; wide band gap semiconductors; 120 W; 2.1 GHz; AlGaN-GaN; Doherty amplifier; WCDMA; class AB power amplifers; digital predistortion correction; Aluminum gallium nitride; Bandwidth; Circuits; Gallium nitride; HEMTs; Linearity; Multiaccess communication; Power amplifiers; Radiofrequency amplifiers; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference, 2006. WAMICON '06. IEEE Annual

Conference_Location

Clearwater Beach, FL

Print_ISBN

1-4244-0849-0

Electronic_ISBN

1-4244-0849-0

Type

conf

DOI

10.1109/WAMICON.2006.351919

Filename

4161081