Simulating quasi-ballistic transport in Si nanotransistors

This paper will examine quasi-ballistic transport in a model nano-scale MOSFET using a full, numerical solution to the Boltzmann equation. We also critically assess standard transport models and show that they fail in the ballistic limit, where transistors are heading. We explain the underlying reasons for this failure and suggest an approach to developing a new class of transport models that work in both the ballistic and collision-dominated regimes.