Quantum corrections to the ´atomistic´ MOSFET simulation

In this paper we study the influence of the quantum effects in the inversion layer on the parameter fluctuation in decanano MOSFETs. The quantum mechanical effects are incorporated in our previously published 3D ´atomistic´ simulation approach using a full 3D implementation of the density gradient formalism. This results in a consistent, fully 3D, quantum mechanical picture which incorporates the vertical inversion layer quantization, lateral confinement effects associated with the current filamentation in the valleys of the potential fluctuation, and tunnelling through the sharp potential barriers associated with individual dopants.