Title :
Implementation of hydrogen passivation in an industrial low-cost multicrystalline silicon solar cell process
Author :
Spiegel, M. ; Tolle, R. ; Gerhards, C. ; Marckmann, C. ; Nussbaumer, N. ; Fath, P. ; Willeke, G. ; Bucher, E.
Author_Institution :
Fakultat fur Phys., Konstanz Univ., Germany
fDate :
29 Sep-3 Oct 1997
Abstract :
The aim of this study was the incorporation of the microwave induced remote hydrogen plasma (MIRHP) passivation into a screen-printed solar cell process using different multicrystalline silicon base materials (BAYSIX (Bayer), Eurosil (Eurosolare), EMC (Sumitomo Sitix)). MIRHP before cell metallization including an antireflection coating (APCVD TiO2 or PECVD SiN) as a capping layer to avoid the out-diffusion of hydrogen during contact firing as well as the MIRHP after cell metallization on uncoated cells have been investigated. As a reference, solar cells were processed without a MIRHP passivation. Using a PECVD SIN ARC on high quality material such as EUROSIL and BAYSIX an increase in the short circuit current density of 0.7 mAcm-2 and in the open circuit voltage of 3-4 mV have been observed by comparing cells with and without MIRHP. Using an APCVD TiO2 ARC on solar cells based on EMC resulted in an increase in the short circuit current density of 0.7 mAcm-2 due to the MIRHP
Keywords :
antireflection coatings; current density; elemental semiconductors; hydrogen; metallisation; passivation; semiconductor device manufacture; semiconductor device testing; silicon; solar cells; 3 to 4 mV; BAYSIX; EMC; Eurosil; H2; Si; antireflection coating; contact firing; industrial manufacturing process; metallization; microwave induced remote hydrogen plasma passivation; multicrystalline Si solar cell; open circuit voltage; screen-printed solar cells; short circuit current density; Electromagnetic compatibility; Hydrogen; Metallization; Passivation; Photovoltaic cells; Plasma applications; Plasma displays; Plasma materials processing; Short circuit currents; Silicon compounds;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654051