Glass carrier SOP technology demonstrated by design of a 19 GHz 3.8 dB CMOS LNA

Author

Aspemyr, Lars ; Sjöland, Henrik ; Berthiot, Denis ; Proot, Jean-Pierre

Author_Institution

Ericsson AB, Sweden

fYear

2009

fDate

28-30 April 2009

Firstpage

84

Lastpage

87

Abstract

To demonstrate the capability of the System-on-Package concept for microwave design a 19 GHz low-power, low-noise amplifier in 0.13 mum CMOS is manufactured. A CMOS chip is flip-chip mounted on a glass carrier with integrated passive components. The LNA has a power gain of 7 dB, a 3.8 dB noise figure, and a IP_1dB of -5.8 dBm at 19.2 GHz. The LNA consumes 5 mA from a 1.2 V supply.

Keywords

CMOS analogue integrated circuits; field effect MIMIC; flip-chip devices; integrated circuit design; low noise amplifiers; low-power electronics; system-on-package; CMOS chip; SOP; current 5 mA; flip-chip mounting; frequency 19 GHz; frequency 19.2 GHz; gain 7 dB; glass carrier; integrated passive components; low-noise amplifier; low-power amplifier; noise figure 3.8 dB; power gain; size 0.13 mum; system-on-package; voltage 1.2 V; CMOS process; CMOS technology; Capacitors; Costs; Fabrication; Glass; Impedance matching; Inductors; Packaging; Radio frequency; BCB; LNA; SOP;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, Automation and Test, 2009. VLSI-DAT '09. International Symposium on

Conference_Location

Hsinchu

Print_ISBN

978-1-4244-2781-9

Electronic_ISBN

978-1-4244-2782-6

Type

conf

DOI

10.1109/VDAT.2009.5158101

Filename

5158101