Title :
Frequency shift mixer on Gunn diode with cathode static domain
Author :
Yatsunenko, A.G. ; Zabolotny, P.I. ; Sabansky, A.N.
Author_Institution :
Inst. of Tech. Mech., Acad. of Sci., Dnepropetrovsk, Ukraine
Abstract :
This paper considers the possibility of effective design of frequency shift mixers (FSM), based on Gunn diodes with non-uniform electron distribution in the cathode. The electron transition frequency is 2-3 times lower than that of the input signal. One of the main merits of the researched FSM is the possibility of carrier frequency suppression under certain values of bias voltage and impedance of transmission line, containing the Gunn-diode.
Keywords :
Gunn diodes; microwave mixers; Gunn diode; bias voltage; carrier frequency suppression; cathode static domain; electron transition frequency; frequency shift mixer; nonuniform electron distribution; transmission line impedance; Ambient intelligence; Cathodes; Diodes; Frequency; Gunn devices; Helium; IEEE catalog; Microwave technology; Organizing;
Conference_Titel :
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location :
Crimea, Ukraine
Print_ISBN :
966-572-048-1
DOI :
10.1109/CRMICO.2000.1255873
