Title :
Broadband medium power amplifier
Author :
Pavluchik, A.A. ; Ignatenko, A.S. ; Nikitin, A.M. ; Kovalenko, A.F.
Author_Institution :
Minsk Res. Inst. of Radiomater., Byelorussia
Abstract :
The results of research on a GaAs MMIC broadband medium power amplifier based on a MESFET process are presented. The calculated properties of the amplifier over the frequency band 1-8 GHz are given.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; field effect MMIC; gallium arsenide; integrated circuit design; wideband amplifiers; 1 to 8 GHz; 7 GHz; 8 dB; GaAs; GaAs MMIC broadband amplifier; MESFET process; SHF; wideband medium power amplifier; Broadband amplifiers; FETs; Frequency; Gain; Gallium arsenide; MESFETs; Microwave technology; Power amplifiers; Power generation; Radiofrequency amplifiers;
Conference_Titel :
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location :
Crimea, Ukraine
Print_ISBN :
966-572-048-1
DOI :
10.1109/CRMICO.2000.1255874
