DocumentCode
2431439
Title
Effect of microwave radiation on the GaAs MESFET parameters
Author
Kamalov, A.B. ; Konakova, R.V. ; Milenin, V.V. ; Rengevych, A.E. ; Soloviev, E.A.
Author_Institution
Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine
fYear
2000
fDate
11-15 Sept. 2000
Firstpage
133
Lastpage
134
Abstract
We present the results of our investigations of the microwave radiation effect on the degradation processes in gallium arsenide MESFETs. It was shown that short-term action of magnetron microwave radiation (frequency of 2.45 GHz, output power of 800 W) impairs the parameters of MESFETs with a Au/Ti/n-GaAs Schottky gate. In this case the main changes occur in the Schottky gate. Replacement of titanium with TiN/sub x/ results in an increase of the Schottky barrier stability to microwave radiation.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; microwaves; radiation effects; stability; 2.45 GHz; 800 W; Au-Ti-GaAs; Au-TiN-GaAs; Au/Ti/n-GaAs Schottky gate; Au/TiN/sub x//n-GaAs Schottky gate; GaAs MESFET parameters; Schottky barrier stability; degradation processes; microwave radiation; Degradation; Frequency; Gallium arsenide; Gold; MESFETs; Power generation; Radiation effects; Schottky barriers; Tin; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location
Crimea, Ukraine
Print_ISBN
966-572-048-1
Type
conf
DOI
10.1109/CRMICO.2000.1255875
Filename
1255875
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