Computational techniques for the nonequilibrium quantum field theory simulation of MOSFETs

Non-equilibrium quantum-field theory (NQFT) has been in existence for almost 40 years yet has only recently become a viable technique for the simulation of semiconductor devices. This presentation reports on Motorola´s effort at building a NQFT-based device simulator suitable for the predictive 2D quantum-mechanical simulation of MOSFETs beyond the 100 nm L/sub eff/ technology-node.