Title :
Power characteristics of the class E amplifier on the bipolar transistor
Author :
Rassohina, Julia V. ; Krizhanovsky, Vladimir G.
Author_Institution :
Dept. of Radiophys., Donetsk State Univ., Ukraine
Abstract :
The results of a numerical simulation based on the bipolar transistor first-order model of the class-E amplifier with a common emitter and low power dissipation on the collector, are presented.
Keywords :
UHF power amplifiers; bipolar transistor circuits; bipolar transistors; equivalent circuits; numerical analysis; semiconductor device models; bipolar transistor first-order model; class-E amplifier; numerical simulation; power characteristics; Bipolar transistors; Chromium; Equivalent circuits; Helium; Impedance; Indium tin oxide; Microwave technology; Organizing; Power amplifiers; Voltage;
Conference_Titel :
Microwave Conference, 2000. Microwave and Telecommunication Technology. 2000 10th International Crimean
Conference_Location :
Crimea, Ukraine
Print_ISBN :
966-572-048-1
DOI :
10.1109/CRMICO.2000.1255876
