Ultra-small MOSFETs: the importance of the full Coulomb interaction on device characteristics

Author

Gross, W.J. ; Vasileska, D. ; Ferry, D.K.

Author_Institution

Intel Corp., Chandler, AZ, USA

fYear

2000

fDate

22-25 May 2000

Firstpage

32

Lastpage

33

Abstract

We discuss a full three-dimensional model of an ultrasmall MOSFET, in which the transport is treated by a coupled EMC and molecular dynamics (MD) procedure to treat the Coulomb interaction in real space. Impurities within the device, including the source and drain regions, are treated as discrete charges and are randomly sited according to the nominal doping density of each region. We find that the inclusion of the proper Coulomb interaction significantly affects both the energy and momentum relaxation processes, but also has a dramatic effect on the characteristic curves of the device.

Keywords

MOSFET; Monte Carlo methods; molecular dynamics method; semiconductor device models; Coulomb interaction; characteristic curve; electrical transport; energy relaxation; ensemble Monte Carlo simulation; molecular dynamics simulation; momentum relaxation; semiconductor device; three-dimensional model; ultra-small MOSFET; Atomic measurements; Electromagnetic compatibility; Electron mobility; Electron traps; Fluctuations; Impurities; MOSFETs; Solid modeling; Solid state circuits; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on

Conference_Location

Glasgow, UK

Print_ISBN

0-85261-704-6

Type

conf

DOI

10.1109/IWCE.2000.869907

Filename

869907