Title :
Millimeter-wave and power characterization for integrated circuits
Author :
de Matos, M. ; Kerhervé, E. ; Lapuyade, H. ; Begueret, J.B. ; Deval, Y.
Author_Institution :
IMS Lab., Univ. of Bordeaux, Talence, France
Abstract :
This paper presents a training in characterization of integrated circuits for millimeter-wave and power applications. The goal of this training is to initiate the student to millimeter-wave measurements. The training is based on high performance equipments like a VNA (Vector Network Analyzer) up to 110 GHz, two probe stations and a millimeter wave load-pull facility. The devices under test (DUT) are power amplifiers at 60 GHz and 77 GHz implemented in CMOS and BiCMOS technologies from STMicroelectronics on silicon substrate. Other radiofrequency component characterizations are also studied.
Keywords :
BiCMOS analogue integrated circuits; CMOS analogue integrated circuits; field effect MIMIC; millimetre wave power amplifiers; network analysers; teaching; BiCMOS technology; CMOS technology; VNA; devices under test; frequency 110 GHz; frequency 60 GHz; frequency 77 GHz; integrated circuits; millimeter wave load-pull facility; power amplifiers; probe stations; radiofrequency component; training; vector network analyzer; Application specific integrated circuits; CMOS technology; Circuit testing; Millimeter wave integrated circuits; Millimeter wave measurements; Millimeter wave technology; Performance analysis; Power amplifiers; Probes; Radiofrequency amplifiers;
Conference_Titel :
EAEEIE Annual Conference, 2009
Conference_Location :
Valencia
Print_ISBN :
978-1-4244-5385-6
Electronic_ISBN :
978-1-4244-5386-3
DOI :
10.1109/EAEEIE.2009.5335500
