DocumentCode :
2431537
Title :
New method of parameters extraction from dark I-V curve
Author :
Kaminski, A. ; Marchand, J.J. ; Fave, A. ; Laugier, A.
Author_Institution :
Lab. de Phys. de la Mater., Inst. Nat. des Sci. Appliquees, Villeurbanne, France
fYear :
1997
fDate :
29 Sep-3 Oct 1997
Firstpage :
203
Lastpage :
206
Abstract :
It is very necessary, for solar cells, to obtain a low series resistance and to be able to determine it with accuracy because it is an important parameter of fill factor and efficiency improvement. In the case of low series resistance, we have developed a new method of parameters extraction from only one dark I-V characteristic. We have also improved another technique (the integral) of series resistance extraction. We have compared these two methods to two other ones (the derivative and the Lee et al. method). Our method gives very good results. Moreover it is very simple to use and presents the advantage of being independent of the voltage step in contrary to the derivative and to the integral. We have then applied our technique to a whole solar cell I-V curve and the results are very good
Keywords :
electric resistance; solar cells; dark I-V curve; efficiency improvement; fill factor; integral technique; low series resistance; parameters extraction; parameters extraction method; solar cells; Differential equations; Integral equations; Parameter extraction; Photovoltaic cells; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
ISSN :
0160-8371
Print_ISBN :
0-7803-3767-0
Type :
conf
DOI :
10.1109/PVSC.1997.654064
Filename :
654064
Link To Document :
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