• DocumentCode
    2431612
  • Title

    Modelling 3D fluctuation effects in highly scaled VLSI devices

  • Author

    Linton, T.D., Jr. ; Shaofeng Yu ; Shaheed, R.

  • Author_Institution
    CAD Div., Intel Technol., Santa Clara, CA, USA
  • fYear
    2000
  • fDate
    22-25 May 2000
  • Firstpage
    45
  • Lastpage
    46
  • Abstract
    VLSI device scaling is increasing the importance of fluctuation effects. The strong 3D nature of these effects, together with decreasing device size, makes 3D modelling essential. In this paper, 3D simulation is used to study four important phenomena in small MOSFETs.
  • Keywords
    MOSFET; VLSI; fluctuations; semiconductor device models; 3D fluctuation effects; MOSFET; VLSI device scaling; simulation model; Alpha particles; Degradation; Doping; Educational institutions; Fluctuations; MOSFETs; Performance loss; Resistors; Resource description framework; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
  • Conference_Location
    Glasgow, UK
  • Print_ISBN
    0-85261-704-6
  • Type

    conf

  • DOI
    10.1109/IWCE.2000.869914
  • Filename
    869914
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2431612