Title :
Modelling 3D fluctuation effects in highly scaled VLSI devices
Author :
Linton, T.D., Jr. ; Shaofeng Yu ; Shaheed, R.
Author_Institution :
CAD Div., Intel Technol., Santa Clara, CA, USA
Abstract :
VLSI device scaling is increasing the importance of fluctuation effects. The strong 3D nature of these effects, together with decreasing device size, makes 3D modelling essential. In this paper, 3D simulation is used to study four important phenomena in small MOSFETs.
Keywords :
MOSFET; VLSI; fluctuations; semiconductor device models; 3D fluctuation effects; MOSFET; VLSI device scaling; simulation model; Alpha particles; Degradation; Doping; Educational institutions; Fluctuations; MOSFETs; Performance loss; Resistors; Resource description framework; Very large scale integration;
Conference_Titel :
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location :
Glasgow, UK
Print_ISBN :
0-85261-704-6
DOI :
10.1109/IWCE.2000.869914
