Title :
Improved SPICE macromodel of phase change random access memory
Author :
Chang, Huan-Lin ; Chang, Hung-Chih ; Yang, Shang-Chi ; Tsai, Hsi-Chun ; Li, Hsuan-Chih ; Liu, C.W.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper presents an improved SPICE macromodel of phase change random access memory (PCRAM). Based on the circuit-based model architecture in [1], the novelty of this work lies in (1) accurate modeling the current-voltage (I-V) plot including the snapback phenomenon, and (2) solution to the falling edge problem to avoid misrepresentation of the PCRAM state, and (3) calibration of the crystallization time for potential multilevel (ML) operation of the PCRAM.
Keywords :
SPICE; crystallisation; integrated circuit modelling; phase change memories; SPICE macromodel; crystallization time; falling edge problem; phase change random access memory; Amorphous materials; Circuits; Crystallization; Electrical resistance measurement; Logic; Nonvolatile memory; Phase change random access memory; Read-write memory; SPICE; Temperature;
Conference_Titel :
VLSI Design, Automation and Test, 2009. VLSI-DAT '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2781-9
Electronic_ISBN :
978-1-4244-2782-6
DOI :
10.1109/VDAT.2009.5158113
