DocumentCode
2431689
Title
18.2% efficient multicrystalline silicon cell
Author
Zhao, Jianhua ; Wang, Aihua ; Altermatt, Pietro P. ; Green, Martin A.
Author_Institution
Photovoltaics Special Res. Centre, Univ. of New South Wales, Sydney, NSW, Australia
fYear
1997
fDate
29 Sep-3 Oct 1997
Firstpage
227
Lastpage
230
Abstract
This paper reports an 18.2% energy conversion efficiency and a 645 mV open-circuit voltage from a multicrystalline silicon cell with a planar front surface tested at the National Renewable Energy Laboratory and Sandia National Laboratories under the 100 mW/cm2 AM1.5 global spectrum at 25°C. This is one of the highest confirmed conversion efficiencies and the highest confirmed open-circuit voltage ever reported to date for a multicrystalline silicon cell. Significantly, these HEM (heat exchange method) multicrystalline silicon solar cells were processed with the standard PERL (passivated emitter, rear locally-diffused) cell high-temperature processing sequence originally developed for float zoned wafers. The high temperature PERL cell processing did not damage the substrate properties
Keywords
carrier lifetime; elemental semiconductors; minority carriers; semiconductor device manufacture; semiconductor device testing; silicon; solar cells; substrates; 18.2 percent; 25 C; 645 mV; PERL high-temperature processing sequence; Si; energy conversion efficiency; heat exchange method; multicrystalline silicon cell; open-circuit voltage; planar front surface; substrate properties; Energy conversion; Laboratories; Photovoltaic cells; Renewable energy resources; Silicon; Solar heating; Standards development; Temperature; Testing; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location
Anaheim, CA
ISSN
0160-8371
Print_ISBN
0-7803-3767-0
Type
conf
DOI
10.1109/PVSC.1997.654070
Filename
654070
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