• DocumentCode
    2431700
  • Title

    2.45 GHz Gilbert mixer using 45 nm CMOS technology

  • Author

    Belorkar, Ujwala A. ; Ladhake, S.A. ; Kale, Sujata N.

  • Author_Institution
    HVPM´´s COET, Amravati, India
  • fYear
    2012
  • fDate
    7-8 April 2012
  • Firstpage
    140
  • Lastpage
    144
  • Abstract
    This paper present the Gilbert mixer which is a transistorized circuit used as an analog multiplier and frequency mixer. The advantage of this circuit is the output current is an accurate multiplication of the (differential) base currents of both inputs As a mixer, its balanced operation, cancels out many unwanted mixing products, resulting in a "cleaner" output. Effort has been taken to design Gilbert cell, using VLSI technology. VLSI Technology includes process design, trends, chip fabrication, real circuit parameters, circuit design, electrical characteristics, configuration building blocks, switching circuitry, translation onto silicon, CAD and practical experience in layout design. The proposed mixer is designed using 45 nm CMOS/VLSI technology with microwind 3.1. This software allows designing and simulating an integrated circuit at physical description level. The main novelties related to the 45 nm technology are the high-k gate oxide, metal gate and very low-k interconnect dielectric. The effective gate length required for 45 nm technology is 25 nm. Efforts had been taken to design physical layout of Gilbert\´s mixer for output frequency of 2.45 GHz using 45 nm CMOS Technology.
  • Keywords
    CMOS integrated circuits; UHF integrated circuits; UHF mixers; analogue multipliers; high-k dielectric thin films; integrated circuit interconnections; integrated circuit layout; CAD; CMOS technology; Gilbert cell design; Gilbert mixer; VLSI technology; analog multiplier; chip fabrication; circuit design; differential base currents; effective gate length; electrical characteristics; frequency 2.45 GHz; frequency mixer; high-k gate oxide; integrated circuit at physical description level; metal gate; physical layout design; process design; size 25 nm; size 45 nm; switching circuitry; transistorized circuit; very low-k interconnect dielectric; CMOS integrated circuits; CMOS technology; Mixers; Noise; Radio frequency; Transistors; Very large scale integration; 45nm CMOS technology; Gilbert cell mixer; Local oscillator(LO); Mixer Design; microwind 3.1;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Business Engineering and Industrial Applications Colloquium (BEIAC), 2012 IEEE
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4673-0425-2
  • Type

    conf

  • DOI
    10.1109/BEIAC.2012.6226039
  • Filename
    6226039