Analytic I-V model for single-electron transistors

Single-electron transistors (SET) offer the promise of ultra-high integration densities and ultra-low power consumption. We present an analytical model for the I-V characteristics of a single-electron transistor, which may be incorporated in a conventional SPICE simulator. Our model takes as its input the physical SET characteristics (capacitances and tunnel resistances, which may be determined experimentally), and it yields I-V curves which are in agreement with the ones obtained from the full-scale Monte Carlo simulations.