Title :
Influence of post-deposition annealing on metal-organic decomposed lanthanum cerium oxide film
Author :
Lim, Way Foong ; Lockman, Zainovia ; Cheong, Kuan Yew
Author_Institution :
Energy Efficient & Sustainable Semicond. Res. Group, Univ. Sains Malaysia, Nibong Tebal, Malaysia
Abstract :
Effects of post-deposition annealing was performed at different annealing temperatures (600, 800, and 1000°C) onto metal-organic decomposed lanthanum cerium oxide film spin-coated on Si substrate. X-ray diffraction analysis had detected four diffraction peaks of lanthanum cerium oxide in all of the investigated samples. Additional peak associated to lanthanum silicate (La2Si2O7) was detected in sample annealed at 1000°C. Electrical properties of the samples were investigated and it was found that sample annealed at 1000°C demonstrated the best metal-oxide-semiconductor characteristics in terms of giving the highest breakdown voltage and lowest leakage current density. Detailed explanation regarding this acquisition was discussed.
Keywords :
X-ray diffraction; annealing; cerium compounds; current density; electric properties; lanthanum compounds; leakage currents; organometallic compounds; Si; X-ray diffraction analysis; breakdown voltage; electrical property; low leakage current density; metal-organic decomposed lanthanum cerium oxide film; metal-oxide-semiconductor characteristics; post-deposition annealing; temperature 1000 degC; temperature 600 degC; temperature 800 degC; Annealing; Cerium; Films; Lanthanum; Logic gates; Silicon; X-ray diffraction; breakdown voltage; lanthanum cerium oxide; leakage current; metal-organic decomposition; post-deposition annealing;
Conference_Titel :
Micro and Nanoelectronics (RSM), 2011 IEEE Regional Symposium on
Conference_Location :
Kota Kinabalu
Print_ISBN :
978-1-61284-844-0
DOI :
10.1109/RSM.2011.6088283
