Influence of post-deposition annealing on metal-organic decomposed lanthanum cerium oxide film

Author

Lim, Way Foong ; Lockman, Zainovia ; Cheong, Kuan Yew

Author_Institution

Energy Efficient & Sustainable Semicond. Res. Group, Univ. Sains Malaysia, Nibong Tebal, Malaysia

fYear

2011

fDate

28-30 Sept. 2011

Firstpage

24

Lastpage

27

Abstract

Effects of post-deposition annealing was performed at different annealing temperatures (600, 800, and 1000°C) onto metal-organic decomposed lanthanum cerium oxide film spin-coated on Si substrate. X-ray diffraction analysis had detected four diffraction peaks of lanthanum cerium oxide in all of the investigated samples. Additional peak associated to lanthanum silicate (La₂Si₂O₇) was detected in sample annealed at 1000°C. Electrical properties of the samples were investigated and it was found that sample annealed at 1000°C demonstrated the best metal-oxide-semiconductor characteristics in terms of giving the highest breakdown voltage and lowest leakage current density. Detailed explanation regarding this acquisition was discussed.

Keywords

X-ray diffraction; annealing; cerium compounds; current density; electric properties; lanthanum compounds; leakage currents; organometallic compounds; Si; X-ray diffraction analysis; breakdown voltage; electrical property; low leakage current density; metal-organic decomposed lanthanum cerium oxide film; metal-oxide-semiconductor characteristics; post-deposition annealing; temperature 1000 degC; temperature 600 degC; temperature 800 degC; Annealing; Cerium; Films; Lanthanum; Logic gates; Silicon; X-ray diffraction; breakdown voltage; lanthanum cerium oxide; leakage current; metal-organic decomposition; post-deposition annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro and Nanoelectronics (RSM), 2011 IEEE Regional Symposium on

Conference_Location

Kota Kinabalu

Print_ISBN

978-1-61284-844-0

Type

conf

DOI

10.1109/RSM.2011.6088283

Filename

6088283