Title :
Structural and morphology of zinc sulphide thin films on various temperature
Author :
Maheran, A. H. Afifah ; Abdullah, H. ; Said, Muzalifah ; Fauzan, M.N.Z.A. ; Haron, Nor Zaidi
Author_Institution :
Fac. of Electron. & Comput. Eng., Univ. Teknikal Malaysia Melaka (UTeM), Durian Tunggal, Malaysia
Abstract :
This study were focused on nanocrystalline structure and morphology on zinc sulphide thin film in four different temperature which are at 250 °C, 300 °C, 350 °C and 400 °C. Sol-gel technique is used to produce the thin films on quartz slide. The reaction of chemical obtained was a colloidal and transparent solution. There are EDX, SEM and XRD experiment were used to characterize the sample in each thin film. EDX analysis confirmed that the thin film consist of element zinc and sulphur. In SEM shows the film are thicker and have bigger grains size when the film annealed at 400 °C compared to temperature of 250 °C with the grain size between 26.8-60.3 nm and 22.3-29.0 nm respectively. The thicknesses of the film are 93.79 nm, 107.2 nm, 119.1 nm and 127.3 nm from temperature of 250 °C to 400 °C respectively. XRD shows development of well-crystallized film with pure wurtzite structure after annealing. XRD spectrum indicates that the films are amorphous and have cubic zinc blend structure.
Keywords :
II-VI semiconductors; X-ray chemical analysis; X-ray diffraction; amorphous semiconductors; annealing; crystallisation; grain size; nanofabrication; nanostructured materials; scanning electron microscopy; semiconductor thin films; sol-gel processing; wide band gap semiconductors; zinc compounds; EDX; SEM; SiO2; XRD; ZnS; amorphous structure; annealing; chemical reaction; colloidal solution; crystallisation; cubic zinc blend structure; grain size; morphology; nanocrystalline structure; quartz slide; sol-gel method; structural property; temperature 250 degC; temperature 300 degC; temperature 350 degC; temperature 400 degC; transparent solution; wurtzite structure; zinc sulphide thin films; Annealing; Chemicals; Films; Substrates; Surface morphology; X-ray scattering; Zinc; Sol-gel method; Zinc Sulphide thin film; annealing; nanocrystalline;
Conference_Titel :
Micro and Nanoelectronics (RSM), 2011 IEEE Regional Symposium on
Conference_Location :
Kota Kinabalu
Print_ISBN :
978-1-61284-844-0
DOI :
10.1109/RSM.2011.6088284