DocumentCode :
2431939
Title :
Boron-doped back-surface fields using an aluminum-alloy process [Si solar cells]
Author :
Gee, James M. ; Bode, Michel D. ; Silva, Beverly L.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
fYear :
1997
fDate :
29 Sep-3 Oct 1997
Firstpage :
275
Lastpage :
278
Abstract :
Si solar cell boron-doped back-surface fields (BSFs) have potentially superior performance compared to aluminum-doped BSFs due to the higher solid solubility of boron compared to aluminum. However, conventional boron diffusions require a long, high-temperature step that is both costly and incompatible with many photovoltaic-grade crystalline-silicon materials. The authors examined a process that uses a relatively low-temperature aluminum-alloy process to obtain a boron-doped BSF by doping the aluminum with boron. In agreement with theoretical expectations, they found that thicker aluminum layers and higher boron doping levels improved the performance of aluminum-alloyed BSFs
Keywords :
aluminium alloys; boron; elemental semiconductors; semiconductor device models; semiconductor device testing; semiconductor doping; silicon; solar cells; Si; Si solar cells; boron diffusions; boron-doped back-surface fields; doping level; low-temperature aluminum-alloy process; photovoltaic performance; solid solubility; Aluminum; Boron alloys; Crystalline materials; Crystallization; Doping profiles; Laboratories; Semiconductor device doping; Silicon; Solids; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
ISSN :
0160-8371
Print_ISBN :
0-7803-3767-0
Type :
conf
DOI :
10.1109/PVSC.1997.654082
Filename :
654082
Link To Document :
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