• DocumentCode
    2431939
  • Title

    Boron-doped back-surface fields using an aluminum-alloy process [Si solar cells]

  • Author

    Gee, James M. ; Bode, Michel D. ; Silva, Beverly L.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • fYear
    1997
  • fDate
    29 Sep-3 Oct 1997
  • Firstpage
    275
  • Lastpage
    278
  • Abstract
    Si solar cell boron-doped back-surface fields (BSFs) have potentially superior performance compared to aluminum-doped BSFs due to the higher solid solubility of boron compared to aluminum. However, conventional boron diffusions require a long, high-temperature step that is both costly and incompatible with many photovoltaic-grade crystalline-silicon materials. The authors examined a process that uses a relatively low-temperature aluminum-alloy process to obtain a boron-doped BSF by doping the aluminum with boron. In agreement with theoretical expectations, they found that thicker aluminum layers and higher boron doping levels improved the performance of aluminum-alloyed BSFs
  • Keywords
    aluminium alloys; boron; elemental semiconductors; semiconductor device models; semiconductor device testing; semiconductor doping; silicon; solar cells; Si; Si solar cells; boron diffusions; boron-doped back-surface fields; doping level; low-temperature aluminum-alloy process; photovoltaic performance; solid solubility; Aluminum; Boron alloys; Crystalline materials; Crystallization; Doping profiles; Laboratories; Semiconductor device doping; Silicon; Solids; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
  • Conference_Location
    Anaheim, CA
  • ISSN
    0160-8371
  • Print_ISBN
    0-7803-3767-0
  • Type

    conf

  • DOI
    10.1109/PVSC.1997.654082
  • Filename
    654082