Title :
Reverse leakage current mechanisms in quantum dot laser structures
Author :
Hasbullah, Nurul Fadzlin ; David, John P R
Author_Institution :
Dept. of Electr. & Comput. Eng., Int. Islamic Univ. Malaysia, Kuala Lumpur, Malaysia
Abstract :
Dark current-voltage measurements undertaken on a series of InAs based quantum dot laser structures show significant variations depending on the growth conditions of the GaAs barrier layer. A systematic study of their temperature dependence suggests that the main mechanism determining the reverse leakage is due to generation-recombination via mid-band traps assisted by Frenkel-Poole emission of carriers from these traps. Since the dark current is a relatively parameter to determine in a device, optimising this is a quicker means of optimising the growth parameters than undertaking full laser testing.
Keywords :
III-V semiconductors; Poole-Frenkel effect; gallium arsenide; indium compounds; leakage currents; optical testing; quantum dot lasers; Frenkel-Poole carrier emission; InAs-InGaAs; barrier layer; carrier generation-recombination; dark current-voltage measurements; growth parameters; laser testing; midband traps; quantum dot laser structures; reverse leakage current; Dark current; Electric fields; Gallium arsenide; Quantum dot lasers; Temperature; Temperature dependence; Temperature measurement;
Conference_Titel :
Micro and Nanoelectronics (RSM), 2011 IEEE Regional Symposium on
Conference_Location :
Kota Kinabalu
Print_ISBN :
978-1-61284-844-0
DOI :
10.1109/RSM.2011.6088285