DocumentCode :
2431952
Title :
Quantum Monte Carlo study of silicon self-interstitials
Author :
Needs, R.J.
Author_Institution :
Cavendish Lab., Cambridge Univ., UK
fYear :
2000
fDate :
22-25 May 2000
Firstpage :
82
Abstract :
An accurate treatment of electron correlation in real materials presents a formidable challenge to condensed matter theorists and quantum chemists. We use the fixed-node diffusion quantum Monte Carlo (DMC) method, which is one of the most accurate methods known for calculating the energies of many-electron systems. The computational cost scales as the cube of the system size, which is much more favourable than other correlated wave function methods, and allows applications to large systems. A basic introduction to the DMC technique is given, and work on self-interstitial defects in silicon is described.
Keywords :
Monte Carlo methods; electron correlations; elemental semiconductors; interstitials; silicon; Si; computational cost; defect formation energies; electron correlation; fixed-node diffusion; many-electron systems; quantum Monte Carlo technique; self-interstitial defects; stable self-interstitials; Computational efficiency; Electrons; Impurities; Manufacturing processes; Microscopy; Monte Carlo methods; Quantum mechanics; Wave functions;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location :
Glasgow, UK
Print_ISBN :
0-85261-704-6
Type :
conf
DOI :
10.1109/IWCE.2000.869934
Filename :
869934
Link To Document :
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