• DocumentCode
    2431952
  • Title

    Quantum Monte Carlo study of silicon self-interstitials

  • Author

    Needs, R.J.

  • Author_Institution
    Cavendish Lab., Cambridge Univ., UK
  • fYear
    2000
  • fDate
    22-25 May 2000
  • Firstpage
    82
  • Abstract
    An accurate treatment of electron correlation in real materials presents a formidable challenge to condensed matter theorists and quantum chemists. We use the fixed-node diffusion quantum Monte Carlo (DMC) method, which is one of the most accurate methods known for calculating the energies of many-electron systems. The computational cost scales as the cube of the system size, which is much more favourable than other correlated wave function methods, and allows applications to large systems. A basic introduction to the DMC technique is given, and work on self-interstitial defects in silicon is described.
  • Keywords
    Monte Carlo methods; electron correlations; elemental semiconductors; interstitials; silicon; Si; computational cost; defect formation energies; electron correlation; fixed-node diffusion; many-electron systems; quantum Monte Carlo technique; self-interstitial defects; stable self-interstitials; Computational efficiency; Electrons; Impurities; Manufacturing processes; Microscopy; Monte Carlo methods; Quantum mechanics; Wave functions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
  • Conference_Location
    Glasgow, UK
  • Print_ISBN
    0-85261-704-6
  • Type

    conf

  • DOI
    10.1109/IWCE.2000.869934
  • Filename
    869934