DocumentCode :
2431958
Title :
Silicon solar cell emitters: optimization and comparison of two different technologies
Author :
Cid, M. ; Stem, N.
Author_Institution :
Lab. de Microelectron., Sao Paulo Univ., Brazil
fYear :
1997
fDate :
29 Sep-3 Oct 1997
Firstpage :
279
Lastpage :
282
Abstract :
Considering recent modifications on n-type highly doped silicon parameters, a new emitter optimization was made based on one-dimensional models with analytical solutions. In order to obtain good accuracy, a fifth order approximation has been considered. Two kinds of emitters, homogeneous and locally deep diffused (LDD), with Gaussian profile of n +pp+ solar cells were optimized. According to the authors´ results: homogeneous emitter solar cells show their maximum efficiencies (η≅ 21.60-21.74%) with doping levels Ns=1×1019-5×1018 (cm-3 ) and (1.2-2.0) μm emitter thickness range. LDD emitter solar cells provide a slightly higher efficiency (η=21.82-21.92%), with N s=1×1020 (cm-3) With 2.0 μm thickness under metal-contacted surface and Ns=1×1019-5×1018 (cm-3 ) with (1.2-2.0) μm thickness range, (sheet resistance range 90-100 Ω) under passivated surface. Although LDD emitter solar cells have a higher efficiency than homogeneous emitter ones, the required technology is more complex and their overall interest for practical applications is questionable
Keywords :
approximation theory; elemental semiconductors; optimisation; semiconductor device models; semiconductor doping; silicon; solar cells; 1.2 to 2 mum; 21.6 to 21.74 percent; 21.82 to 21.92 percent; 90 to 100 ohm; Gaussian profile; Si; Si solar cell emitters; emitter optimization; fifth order approximation; homogeneous emitters; locally deep diffused emitters; n-type highly doped silicon; n+pp+ solar cells; one-dimensional models; Analytical models; Charge carrier lifetime; Contact resistance; Doping; Laboratories; Photonic band gap; Photovoltaic cells; Semiconductor process modeling; Silicon; Surface resistance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
ISSN :
0160-8371
Print_ISBN :
0-7803-3767-0
Type :
conf
DOI :
10.1109/PVSC.1997.654083
Filename :
654083
Link To Document :
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