Essential corrective factors in TCAD calibration for MOSFET device

Calibrated TCAD tool is vital in contemporary process and device development as it could helps in reducing the expensive fabrication of engineering and split lots. This paper presents a methodology for 1-D and 2-D TCAD calibration process of MOSFET with respect to various corrective factors namely implant dose, channel length and series resistance. All the required steps from calibration strategy to data inspections and identification of corrective factor are discussed. The experimental data such as SIMS profile, TEM picture and I-V curves are collected from the actual fabricated wafers. The good agreement between experimental and TCAD simulation data verifies the accuracy of proposed calibration methodology.