Investigation of effects of nanowires numbers in N-channel and P-channel nanowire transistors on nanowire-CMOS characteristics

Author

Hashim, Yasir ; Sidek, Othman

Author_Institution

Collaborative Microelectron. Design Excellence Centre(CEDEC), Univ. of Sci. Malaysia, Nibong Tebal, Malaysia

fYear

2011

fDate

28-30 Sept. 2011

Firstpage

45

Lastpage

47

Abstract

This paper is to study the characteristics of nanowire-CMOS and effect of increasing of numbers of nanowires in transistors on the nanowire-CMOS characteristics. This study used MuGFET simulation tool to produce the characteristics of nanowire transistors and used as input to MATLAB software to produce the characteristics of nanowire-CMOS. Increasing channel nanowires in P-channel transistor tends to improve the transfer characteristics of CMOS. Increasing channel nanowires in N-channel transistor tends to poorer transfer characteristics of CMOS.

Keywords

CMOS integrated circuits; mathematics computing; nanowires; transistors; Matlab software; MuGFET simulation tool; N-channel nanowire transistors; P-channel nanowire transistors; nanowire-CMOS characteristics; CMOS integrated circuits; Nanowires; Semiconductor device modeling; Silicon; Software; Solid modeling; Transistors; CMOS; nanowire; simulation; transfer characteristics; transistor;

fLanguage

English

Publisher

ieee

Conference_Titel

Micro and Nanoelectronics (RSM), 2011 IEEE Regional Symposium on

Conference_Location

Kota Kinabalu

Print_ISBN

978-1-61284-844-0

Type

conf

DOI

10.1109/RSM.2011.6088288

Filename

6088288