Title :
Temperature dependent current transport in Schottky diodes of nano structured ZnO grown on Si by magnetron sputtering
Author :
Faraz, S.M. ; Khranovskyy, V. ; Yakimova, R. ; Ulyashin, A. ; Wahab, Q.
Author_Institution :
Dept. of Electron. Eng., NED Univ. of Eng. & Technol., Karachi, Pakistan
Abstract :
Nano-structured ZnO thin-film is grown by dc-magnetron sputtering on Si substrates using a sintered ZnO target. As grown film is characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM). About 165 nm thick ZnO film is revealed with highly oriented, nano-structured columnar grains. Nickel (Ni) Schottky diodes are fabricated and characterized by current-voltage (I-V), capacitance-voltage (C-V) and temperature dependent current-voltage (I-V-T) measurements. Charge transport mechanism is studied from the I-V measurements performed in the temperature range from 300-400K. Both reverse and forward currents increased with temperature. Increase in barrier height along with a decrease in ideality factor with increasing temperature indicates thermionic field emission is the dominant charge transport mechanism in our devices.
Keywords :
II-VI semiconductors; Schottky diodes; X-ray diffraction; nanostructured materials; nickel; scanning electron microscopy; sputtering; thin films; wide band gap semiconductors; zinc compounds; I-V measurements; Ni; SEM; Si; X-ray diffraction; XRD; ZnO; capacitance-voltage measurements; charge transport mechanism; dc-magnetron sputtering; forward currents; nanostructured columnar grains; nanostructured thin-film; nickel Schottky diodes; reverse currents; scanning electron microscopy; temperature 300 K to 400 K; temperature dependent current transport; temperature dependent current-voltage measurements; thermionic field emission; Current measurement; Films; Schottky diodes; Temperature; Temperature dependence; Temperature measurement; Zinc oxide;
Conference_Titel :
Micro and Nanoelectronics (RSM), 2011 IEEE Regional Symposium on
Conference_Location :
Kota Kinabalu
Print_ISBN :
978-1-61284-844-0
DOI :
10.1109/RSM.2011.6088289
