Advances in the CIS research at NREL

Author

Ramanathan, K. ; Bhattacharya, R.N. ; Granata, J. ; Webb, J. ; Niles, D. ; Contreras, M.A. ; Wiesner, H. ; Hasoon, F.S. ; Noufi, R.

Author_Institution

Nat. Renewable Energy Lab., Golden, CO, USA

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

319

Lastpage

322

Abstract

This paper summarizes the research of the CIS Team at NREL in three major areas: absorber deposition; understanding the role of chemical bath deposited (CBD) CdS in CIS junctions; and in the development of devices without CdS. Low cost, scaleable processes chosen for absorber fabrication include sputtering, electrodeposition (ED), and close spaced sublimation (CSS). The interaction between the CBD and the CIS has been investigated and the results show that Cd might be instrumental in shaping the interface. We have also developed a process to fabricate a 13.5% efficiency ZnO/CulnGaSe₂ device without CdS or other buffer layers

Keywords

copper compounds; electrodeposits; gallium compounds; indium compounds; p-n heterojunctions; semiconductor thin films; solar cells; sputtered coatings; sublimation; ternary semiconductors; 13.5 percent; CIS junctions; NREL CI team; ZnO-CuInSe₂; ZnO/CulnGaSe₂ device; absorber deposition; absorber fabrication; chemical bath deposition; close spaced sublimation; electrodeposition; low cost scaleable processes; sputtering; thin film solar cells; Atherosclerosis; Atmosphere; Cascading style sheets; Chemicals; Computational Intelligence Society; Fabrication; Laboratories; Sputtering; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654092

Filename

654092