DocumentCode
2432104
Title
Hot electron modelling of HEMTs
Author
Cole, E.A.B. ; Snowden, C.M. ; Hussain, S.
Author_Institution
Dept. of Appl. Math., Leeds Univ., UK
fYear
2000
fDate
22-25 May 2000
Firstpage
98
Lastpage
99
Abstract
The HEMT with recessed gate is modelled using a finite difference method by solving the current continuity equation, energy transport equation and Poisson equation self-consistently with the Schrodinger equation. The independent variables used in the routines are the electrostatic potential /spl psi/, the quasi Fermi level E/sub F/ and the electron temperature.
Keywords
Fermi level; Poisson equation; Schrodinger equation; finite difference methods; high electron mobility transistors; hot carriers; semiconductor device models; HEMT; Poisson equation; Schrodinger equation; current continuity equation; electron temperature; electrostatic potential; energy transport equation; finite difference method; hot electron model; quasi-Fermi level; recessed gate; self-consistent method; Difference equations; Eigenvalues and eigenfunctions; Electrons; Electrostatics; HEMTs; MODFETs; Mathematical model; Mathematics; Poisson equations; Schrodinger equation;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location
Glasgow, UK
Print_ISBN
0-85261-704-6
Type
conf
DOI
10.1109/IWCE.2000.869943
Filename
869943
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