Title :
Simulation of widebandgap multi-quantum well light emitting diodes
Author :
Oriato, D. ; Walker, A.B. ; Wang, W.N.
Author_Institution :
Dept. of Phys., Bath Univ., UK
Abstract :
In the last 5 years, III-nitrides have attracted enormous attention because of their wide bandgaps, and after finding how to grow material of sufficient quality, they are being exploited commercially for blue and green light emitting diodes (LEDs). There remains much to be done in finding device structures that optimise LED efficiency. Here, we present simulations of charge transport in a novel structure based on two quantum wells.
Keywords :
III-V semiconductors; light emitting diodes; quantum well devices; semiconductor device models; wide band gap semiconductors; III-nitride; charge transport; numerical simulation; wide-bandgap multi-quantum well light emitting diode; Aluminum gallium nitride; Charge carrier processes; Gallium nitride; Laser theory; Light emitting diodes; Optical buffering; Physics; Quantum well lasers; Radiative recombination; Tunneling;
Conference_Titel :
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location :
Glasgow, UK
Print_ISBN :
0-85261-704-6
DOI :
10.1109/IWCE.2000.869944
