DocumentCode
2432127
Title
Simulation of widebandgap multi-quantum well light emitting diodes
Author
Oriato, D. ; Walker, A.B. ; Wang, W.N.
Author_Institution
Dept. of Phys., Bath Univ., UK
fYear
2000
fDate
22-25 May 2000
Firstpage
100
Lastpage
101
Abstract
In the last 5 years, III-nitrides have attracted enormous attention because of their wide bandgaps, and after finding how to grow material of sufficient quality, they are being exploited commercially for blue and green light emitting diodes (LEDs). There remains much to be done in finding device structures that optimise LED efficiency. Here, we present simulations of charge transport in a novel structure based on two quantum wells.
Keywords
III-V semiconductors; light emitting diodes; quantum well devices; semiconductor device models; wide band gap semiconductors; III-nitride; charge transport; numerical simulation; wide-bandgap multi-quantum well light emitting diode; Aluminum gallium nitride; Charge carrier processes; Gallium nitride; Laser theory; Light emitting diodes; Optical buffering; Physics; Quantum well lasers; Radiative recombination; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location
Glasgow, UK
Print_ISBN
0-85261-704-6
Type
conf
DOI
10.1109/IWCE.2000.869944
Filename
869944
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