Title :
Fabrication and characterization of ultra-thin PIN detector
Author :
Li, Ying ; Ma, Shenglin ; Jin, Yufeng ; Yu, Min ; Zhang, Lu ; Wang, Jinyan
Author_Institution :
Nat. Key Lab. on Micro/Nano Fabrication Technol., Peking Univ., Beijing, China
Abstract :
A novel process for ultra-thin (30~50μm) PIN detector fabrication has been developed. The leakage current of all our PIN detectors is found to be less than 6nA at 10V reverse bias. Compared with the leakage current before packaging, the I-V characteristics remain unchanged after the detectors are packaged. The active region get fully depleted at -3V bias, while the breakdown voltage is measured to be -664V. Finally, our ultra-thin PIN detector offers an energy resolution about 21.78KeV for 5.486MeV alpha when used in spectroscopy.
Keywords :
leakage currents; microfabrication; p-i-n diodes; semiconductor counters; semiconductor device breakdown; semiconductor device manufacture; I-V characteristics; PIN detector leakage current; breakdown voltage; ultrathin PIN detector characterization; ultrathin PIN detector fabrication; breakdown voltage; energy resolution; leakage current; ultra-thin PIN detector;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4244-6543-9
DOI :
10.1109/NEMS.2010.5592450
