DocumentCode
2432246
Title
A new analytical model for lateral breakdown voltage of double-gate power MOSFETs
Author
Mohammad, Hossein ; Abdullah, Huda ; Dee, Chang Fu ; Menon, P. Susthitha ; Majlis, Burhanuddin Yeop
Author_Institution
Dept. of Electr., Electron. & Syst. Eng., Univ. Kebangsaan Malaysia (UKM), Bangi, Malaysia
fYear
2011
fDate
28-30 Sept. 2011
Firstpage
92
Lastpage
95
Abstract
A simple analytical model for the surface potential, surface field distribution and lateral breakdown voltage of double-gate power MOSFETs has been proposed. The model is based on the analytical solution for the two-dimensional Poisson equation. From this solution, the reliance of breakdown voltage on the device parameters is also investigated. The validity of this model is demonstrated by comparison with numerical simulation and experimental values.
Keywords
Poisson equation; numerical analysis; power MOSFET; analytical model; double-gate power MOSFET; lateral breakdown voltage; numerical simulation; surface field distribution; two-dimensional Poisson equation; Analytical models; Electric fields; Electric potential; Logic gates; MOSFETs; Mathematical model; Analytical model; Breakdown voltage; Double-gate; Surface potential;
fLanguage
English
Publisher
ieee
Conference_Titel
Micro and Nanoelectronics (RSM), 2011 IEEE Regional Symposium on
Conference_Location
Kota Kinabalu
Print_ISBN
978-1-61284-844-0
Type
conf
DOI
10.1109/RSM.2011.6088299
Filename
6088299
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