DocumentCode
2432284
Title
Electron molecule collisions for the science of plasma processing
Author
Garscadden, A. ; Nagpal, R. ; Haaland, P.D. ; Clark, J.
Author_Institution
Plasma Res. Group, Wright Lab., Wright Patterson Air Force Base, OH, USA
fYear
1995
fDate
5-8 June 1995
Firstpage
149
Abstract
Summary form only given, as follows. Plasma processing of materials has emerged as the enabling technology for many industrial applications ranging from the fabrication of microelectronic circuits to coatings for advanced combustion engines. There are also applications in waste treatment, chemical processing, and medicine. After impressive, mainly empirical successes, further developments now require more precise control and understanding of the mechanisms for selective deposition, etching, or reaction. The electron temperature of a non-equilibrium plasma can easily be 20,000 K while the gas temperature is less than 500 K. The reactivity of the plasma-excited gases is often enhanced by many orders of magnitude. Reliable collisional data for non-traditional gases such as BCl/sub 3/, (C/sub 2/H/sub 5/O)/sub 4/Si, SiF/sub 4/, and ((C/sub 2/H/sub 5/)/sub 2/N)/sub 4/Ti are critical to modeling and scaling industrial processes. Electron and ion collisions, especially those causing dissociation of the initial gases, and reactions of the resulting radicals with gases and at surfaces are crucial. Extant collisional data and methods are reviewed in the context of emerging technological requirements. Examples are presented for i) ´crossed-beam´ and ´swarm´ studies of electron-molecule collisions, ii) Fourier Transform Mass Spectroscopy probes of dissociative ionization, attachment, and charge-transfer collisions, and iii) Surface Desorption Spectroscopy examinations of surface reactions.
Keywords
Fourier transform spectroscopy; charge exchange; chemistry; desorption; electron attachment; electron impact dissociation; electron impact ionisation; mass spectroscopy; molecule-electron collisions; plasma applications; plasma collision processes; plasma diagnostics; plasma temperature; sputter etching; surface chemistry; 20000 K; 500 K; BCl/sub 3/; Fourier transform mass spectroscopy probes; SiF/sub 4/; attachment; charge-transfer collisions; chemical processing; crossed-beam study; dissociative ionization; electron molecule collisions; electron temperature; etching; fabrication; medicine; nonequilibrium plasma; plasma processing; plasma-excited gases; reaction; reactivity; selective deposition; surface desorption spectroscopy; surface reactions; swarm study; waste treatment; Chemical technology; Electrons; Gases; Mass spectroscopy; Nuclear and plasma sciences; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma temperature; Textile industry;
fLanguage
English
Publisher
ieee
Conference_Titel
Plasma Science, 1995. IEEE Conference Record - Abstracts., 1995 IEEE International Conference on
Conference_Location
Madison, WI, USA
ISSN
0730-9244
Print_ISBN
0-7803-2669-5
Type
conf
DOI
10.1109/PLASMA.1995.533554
Filename
533554
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