Title :
0.4 mw wideband lna with double gm enhancement and feed-forward noise cancellation
Author :
Zhi Li ; Liguo Sun ; Lu Huang
Author_Institution :
Dept. of Electron. Eng. & Inf. Sci., Univ. of Sci. & Technol. of China, Hefei, China
Abstract :
A low-power wideband common-gate (CG) low-noise amplifier (LNA) presented . The CG LNA uses double gm enhancement to provide input matching under low-power consumption. Feed-forward noise cancellation (FFNC) is employed in the LNA to suppress the noise from the CG transistor. The LNA is designed and fabricated in TSMC 130-nm CMOS technology. This LNA can achieve a maximum gain of 14 dB with a 3 dB bandwidth from 350 to 950 MHz. The LNA consumes 0.5 mA current under a 0.8-V supply. The average noise figure of the LNA is 4.0 dB. The core area of the LNA is 0.06 mm2.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; feedforward; low noise amplifiers; TSMC CMOS technology; current 0.5 mA; double gm enhancement; feed-forward noise cancellation; frequency 350 MHz to 950 MHz; gain 14 dB; input matching; low-power consumption; noise figure; power 0.4 mW; size 130 nm; voltage 0.8 V; wideband LNA;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2013.3537
