2D quantum simulation of MOSFET using the non equilibrium Green´s function method

We present results and describe progress we have made in the development of our fully quantum mechanical two dimensional device simulator. The simulator is based on the non equilibrium Greens function method (NEGF), which in the absence of many body effects (electron-phonon and electron-electron interactions) is equivalent to Schrodinger´s equation with open boundaries. We discuss issues faced with regards to open boundary conditions, computational resource requirements, and their relationship to self consistent solution of the Poisson-NEGF equations.