• DocumentCode
    2432339
  • Title

    An upstream flux splitting method for hydrodynamic modeling of deep submicron devices

  • Author

    Shen, Min ; Yip, Wai-Kay ; Cheng, Ming-C ; Lio, J.J.

  • Author_Institution
    Adv. Mater. Res. Inst., New Orleans Univ., LA, USA
  • fYear
    2000
  • fDate
    22-25 May 2000
  • Firstpage
    114
  • Lastpage
    115
  • Abstract
    In this study, we apply the advective upstream splitting method (AUSM) to the hydrodynamic equations to examine its capability for simulation of the deep submicron devices. The numerical flux in the AUSM is separated into the convective and pressure-like contributions at the cell interface. The convective fluxes are carried by the carrier average velocity but the pressure-like flux is governed by the carrier random velocity. Discretization of these two physically distinct fluxes is thus performed separately in AUSM. In this study, hydrodynamic and Poisson´s equations are solved self-consistently for electrons in the n-channel MESFET with a gate length of 0.1 /spl mu/m using the AUSM.
  • Keywords
    Poisson equation; Schottky gate field effect transistors; semiconductor device models; MESFET; Poisson equation; advective upstream splitting method; deep submicron semiconductor device; discretization; flux splitting; hydrodynamic model; numerical simulation; Boundary conditions; Computational efficiency; Electrons; Fluid dynamics; Hydrodynamics; MESFETs; Navier-Stokes equations; Poisson equations; Robustness; Schottky barriers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
  • Conference_Location
    Glasgow, UK
  • Print_ISBN
    0-85261-704-6
  • Type

    conf

  • DOI
    10.1109/IWCE.2000.869951
  • Filename
    869951