DocumentCode :
2432339
Title :
An upstream flux splitting method for hydrodynamic modeling of deep submicron devices
Author :
Shen, Min ; Yip, Wai-Kay ; Cheng, Ming-C ; Lio, J.J.
Author_Institution :
Adv. Mater. Res. Inst., New Orleans Univ., LA, USA
fYear :
2000
fDate :
22-25 May 2000
Firstpage :
114
Lastpage :
115
Abstract :
In this study, we apply the advective upstream splitting method (AUSM) to the hydrodynamic equations to examine its capability for simulation of the deep submicron devices. The numerical flux in the AUSM is separated into the convective and pressure-like contributions at the cell interface. The convective fluxes are carried by the carrier average velocity but the pressure-like flux is governed by the carrier random velocity. Discretization of these two physically distinct fluxes is thus performed separately in AUSM. In this study, hydrodynamic and Poisson´s equations are solved self-consistently for electrons in the n-channel MESFET with a gate length of 0.1 /spl mu/m using the AUSM.
Keywords :
Poisson equation; Schottky gate field effect transistors; semiconductor device models; MESFET; Poisson equation; advective upstream splitting method; deep submicron semiconductor device; discretization; flux splitting; hydrodynamic model; numerical simulation; Boundary conditions; Computational efficiency; Electrons; Fluid dynamics; Hydrodynamics; MESFETs; Navier-Stokes equations; Poisson equations; Robustness; Schottky barriers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location :
Glasgow, UK
Print_ISBN :
0-85261-704-6
Type :
conf
DOI :
10.1109/IWCE.2000.869951
Filename :
869951
Link To Document :
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