DocumentCode :
2432379
Title :
Quantum potential approaches for nano-scale device simulation
Author :
Tsuchiya, H. ; Winstead, B. ; Ravaioli, U.
Author_Institution :
Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
fYear :
2000
fDate :
22-25 May 2000
Firstpage :
118
Lastpage :
119
Abstract :
We present a new approach for quantum modelling, applicable to multidimensional ultra-small device simulation. In this work, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation. We apply the Monte Carlo method to solve the quantum transport equation, and demonstrate that the quantum transport effects such as tunnelling and energy quantization can be incorporated in the standard Monte Carlo techniques. The relevance to the quantum moment theory and the density-gradient theory will also be discussed.
Keywords :
Boltzmann equation; Monte Carlo methods; quantisation (quantum theory); semiconductor device models; tunnelling; Boltzmann equation; Monte Carlo method; density gradient theory; energy quantization; multidimensional ultra-small device simulation; nanoscale modelling; quantum moment theory; quantum potential; quantum transport equation; tunnelling; Computational modeling; Computer interfaces; Electron devices; Equations; MOSFETs; Monte Carlo methods; Nanoscale devices; Potential well; Quantum mechanics; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location :
Glasgow, UK
Print_ISBN :
0-85261-704-6
Type :
conf
DOI :
10.1109/IWCE.2000.869953
Filename :
869953
Link To Document :
بازگشت