• DocumentCode
    2432379
  • Title

    Quantum potential approaches for nano-scale device simulation

  • Author

    Tsuchiya, H. ; Winstead, B. ; Ravaioli, U.

  • Author_Institution
    Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
  • fYear
    2000
  • fDate
    22-25 May 2000
  • Firstpage
    118
  • Lastpage
    119
  • Abstract
    We present a new approach for quantum modelling, applicable to multidimensional ultra-small device simulation. In this work, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation. We apply the Monte Carlo method to solve the quantum transport equation, and demonstrate that the quantum transport effects such as tunnelling and energy quantization can be incorporated in the standard Monte Carlo techniques. The relevance to the quantum moment theory and the density-gradient theory will also be discussed.
  • Keywords
    Boltzmann equation; Monte Carlo methods; quantisation (quantum theory); semiconductor device models; tunnelling; Boltzmann equation; Monte Carlo method; density gradient theory; energy quantization; multidimensional ultra-small device simulation; nanoscale modelling; quantum moment theory; quantum potential; quantum transport equation; tunnelling; Computational modeling; Computer interfaces; Electron devices; Equations; MOSFETs; Monte Carlo methods; Nanoscale devices; Potential well; Quantum mechanics; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
  • Conference_Location
    Glasgow, UK
  • Print_ISBN
    0-85261-704-6
  • Type

    conf

  • DOI
    10.1109/IWCE.2000.869953
  • Filename
    869953