DocumentCode
2432379
Title
Quantum potential approaches for nano-scale device simulation
Author
Tsuchiya, H. ; Winstead, B. ; Ravaioli, U.
Author_Institution
Beckman Inst. for Adv. Sci. & Technol., Illinois Univ., Urbana, IL, USA
fYear
2000
fDate
22-25 May 2000
Firstpage
118
Lastpage
119
Abstract
We present a new approach for quantum modelling, applicable to multidimensional ultra-small device simulation. In this work, the quantum effects are represented in terms of quantum mechanically corrected potential in the classical Boltzmann equation. We apply the Monte Carlo method to solve the quantum transport equation, and demonstrate that the quantum transport effects such as tunnelling and energy quantization can be incorporated in the standard Monte Carlo techniques. The relevance to the quantum moment theory and the density-gradient theory will also be discussed.
Keywords
Boltzmann equation; Monte Carlo methods; quantisation (quantum theory); semiconductor device models; tunnelling; Boltzmann equation; Monte Carlo method; density gradient theory; energy quantization; multidimensional ultra-small device simulation; nanoscale modelling; quantum moment theory; quantum potential; quantum transport equation; tunnelling; Computational modeling; Computer interfaces; Electron devices; Equations; MOSFETs; Monte Carlo methods; Nanoscale devices; Potential well; Quantum mechanics; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on
Conference_Location
Glasgow, UK
Print_ISBN
0-85261-704-6
Type
conf
DOI
10.1109/IWCE.2000.869953
Filename
869953
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