Title :
MEMS structures using polycrystalline diamond single-material micro technologies
Author :
Cao, Zongliang ; Aslam, Dean
Author_Institution :
Micro & Nano Technol. Lab., Michigan State Univ., East Lansing, MI, USA
Abstract :
Large band gap materials such as diamond (5.5 eV) and AlN (6 eV) offer the possibility of making MEMS structures out of a single material by varying the doping level to achieve the semi-conducting, metallic and insulating (undoped) properties needed in a typical MEMS structure. Polycrystalline diamond (poly-C), which has recently been used in the fabrication of BioMEMS, RFMEMS, and MEMS packaging, is inexpensive and retains many of the unique properties of single-crystal diamond. However, the development of diamond-based SMM technology faces a number of challenges including (a) producing highly-insulating and highly-conducting poly-C films, (b) creating ohmic contacts, and (c) patterning by dry etching of poly-C films grown on SiO2. The results presented in this paper, which addresses these issues for the first time, are expected to lead to SMM based MEMS structures and packaging.
Keywords :
chemical vapour deposition; diamond; electrical conductivity; electronics packaging; etching; microfabrication; micromechanical devices; ohmic contacts; semiconductor thin films; wide band gap semiconductors; BioMEMS packaging; C; MEMS packaging; MEMS structures; RFMEMS packaging; doping level; dry etching; highly-conducting poly-C films; insulating properties; large band gap materials; metallic properties; ohmic contacts; polycrystalline diamond; semiconducting properties; single-material micro technologies; Single-Material MEMS; dry etching; electrical conductivity; polycrystalline diamond;
Conference_Titel :
Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
Conference_Location :
Xiamen
Print_ISBN :
978-1-4244-6543-9
DOI :
10.1109/NEMS.2010.5592460