DocumentCode :
2432408
Title :
Built-in self-repair techniques for content addressable memories
Author :
Lin, Guan-Quan ; Wang, Zhen-Yu ; Lu, Shyue-Kung
Author_Institution :
Dep. of Electron. Eng., Fu Jen Catholic Univ., Taipei, Taiwan
fYear :
2009
fDate :
28-30 April 2009
Firstpage :
267
Lastpage :
270
Abstract :
In this paper, we propose block-level replacement techniques for content-addressable memories. The CAM array is first divided into row banks and column banks. Then, for each divided array (the overlapped CAM cells of a row bank and a column bank), two redundant row blocks are added and reconfiguration is performed at the block level instead of the conventional word level. According to simulation results, the hardware overhead is 1.31% for a 1024 times 1024-bit CAM array. We also analyze the repair rates of our approaches. It is also found that our approach will achieve higher repair rates.
Keywords :
content-addressable storage; block-level replacement technique; built-in self-repair technique; content addressable memory; Associative memory; Built-in self-test; CADCAM; Circuit faults; Computer aided manufacturing; Decoding; Fault tolerance; Hardware; Redundancy; Registers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Design, Automation and Test, 2009. VLSI-DAT '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2781-9
Electronic_ISBN :
978-1-4244-2782-6
Type :
conf
DOI :
10.1109/VDAT.2009.5158146
Filename :
5158146
Link To Document :
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