• DocumentCode
    2432420
  • Title

    All-diamond integrated field emission device with a micro-tip array cathode

  • Author

    Cao, Zongliang ; Aslam, Dean

  • Author_Institution
    Micro & Nano Technol. Lab., Michigan State Univ., East Lansing, MI, USA
  • fYear
    2010
  • fDate
    20-23 Jan. 2010
  • Firstpage
    565
  • Lastpage
    568
  • Abstract
    In order to permit (a) lower operating voltage, (b) high accuracy of anode to emitter spacing, and (c) well defined emitter area, a gated poly-C field emission device (FED) is reported. It uses undoped (ρ=109 Ω·cm) as an insulation layer and highly-doped (ρ=10-3 Ω·cm) poly-C as electrodes and interconnects to create an integrated FED (IFED) with a micro-tip cathode array using dry-etching of poly-C. Fabrication and testing of an all-diamond IFED is reported for the first time.
  • Keywords
    cathodes; etching; field emission displays; all-diamond IFED; all-diamond integrated field emission device; anode; dry-etching; electrodes; emitter spacing; gated poly-C field emission device; insulation layer; micro-tip array cathode; diamond pillars; dry etching; field emission; polycrystalline diamond;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano/Micro Engineered and Molecular Systems (NEMS), 2010 5th IEEE International Conference on
  • Conference_Location
    Xiamen
  • Print_ISBN
    978-1-4244-6543-9
  • Type

    conf

  • DOI
    10.1109/NEMS.2010.5592462
  • Filename
    5592462
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2432420