All-diamond integrated field emission device with a micro-tip array cathode

In order to permit (a) lower operating voltage, (b) high accuracy of anode to emitter spacing, and (c) well defined emitter area, a gated poly-C field emission device (FED) is reported. It uses undoped (ρ=10⁹ Ω·cm) as an insulation layer and highly-doped (ρ=10^-3 Ω·cm) poly-C as electrodes and interconnects to create an integrated FED (IFED) with a micro-tip cathode array using dry-etching of poly-C. Fabrication and testing of an all-diamond IFED is reported for the first time.