DocumentCode :
2432466
Title :
Quantitative incorporation of sodium in CuInSe2 and Cu(In,Ga)Se2 photovoltaic devices
Author :
Granata, J.E. ; Sites, J.R. ; Asher, S. ; Matson, R.J.
Author_Institution :
Dept. of Phys., Colorado State Univ., Fort Collins, CO, USA
fYear :
1997
fDate :
29 Sep-3 Oct 1997
Firstpage :
387
Lastpage :
390
Abstract :
Sodium was deliberately introduced into CuInSe2 and Cu(In,Ga)Se2 photovoltaic solar cells in a controlled manner. The amount of sodium added was varied in order to pinpoint the range of sodium concentrations in the CuIn(Ga)Se2 film for optimal performance. Films were analyzed using secondary ion mass spectroscopy and induced-coupling plasma spectroscopy to quantify the sodium concentration. The results are compared with the calculation. Finished devices show improvements in open-circuit voltage, fill factor and hole density for sodium concentrations in the range of approximately 0.05 to 0.5 atomic percent
Keywords :
copper compounds; gallium compounds; hole density; indium compounds; secondary ion mass spectroscopy; sodium; solar cells; ternary semiconductors; Cu(In,Ga)Se2 solar cells; Cu(InGa)Se2-Na; CuInSe2 solar cells; CuInSe2-Na; Na incorporation; fill factor; hole density; induced-coupling plasma spectroscopy; open-circuit voltage; optimal performance; secondary ion mass spectroscopy; sodium concentrations; Computational Intelligence Society; Glass; Laboratories; Mass spectroscopy; Photovoltaic cells; Photovoltaic systems; Plasma devices; Renewable energy resources; Scanning electron microscopy; Solar power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
ISSN :
0160-8371
Print_ISBN :
0-7803-3767-0
Type :
conf
DOI :
10.1109/PVSC.1997.654109
Filename :
654109
Link To Document :
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