DocumentCode
2432482
Title
Calculated and measured silicon p-i-n limiter short-pulse damage thresholds
Author
Ward, A.L. ; Tan, R.J. ; Kaul, R.
Author_Institution
Harry Diamond Lab., Adelphi, MD, USA
fYear
1990
fDate
8-10 May 1990
Firstpage
761
Abstract
Limiters used to protect sensitive electronics from high-level RF radiation are themselves subject to damage. A combined theoretical and experimental study has been made of damage thresholds of silicon PIN limiters with intrinsic region widths of 0.5 to 10 mu m, using 1.5-9.4-GHz frequencies, and pulse lengths from 10 to 1000 ns. This work is also useful in designing dual-diode limiters to reduce spike leakage and to increase the damage threshold.<>
Keywords
elemental semiconductors; microwave limiters; p-i-n diodes; protection; silicon; 0.5 to 10 micron; 1.5 to 9.4 GHz; 10 to 1000 ns; Si; dual-diode limiters; high-level RF radiation; intrinsic region widths; p-i-n limiter; pulse lengths; sensitive electronics protection; short-pulse damage thresholds; spike leakage reduction; Frequency; Heating; Laboratories; P-i-n diodes; PIN photodiodes; Protection; Pulse measurements; Silicon; Space vector pulse width modulation; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location
Dallas, TX
Type
conf
DOI
10.1109/MWSYM.1990.99690
Filename
99690
Link To Document