DocumentCode
2432535
Title
DA and AD converters for 25 GS/s and above
Author
Ellermeyer, Tobias ; Müllrich, Jens ; Rupeter, Jörg ; Langenhagen, Henning ; Bielik, Anna ; Moller, Michael
Author_Institution
MICRAM Microelectron. GmbH, Bochum
fYear
2008
fDate
21-23 July 2008
Firstpage
117
Lastpage
118
Abstract
This paper reports on the status of the design and expected performance of high speed AD and DA converters in SiGe bipolar technology for future 100 Gbit/s Ethernet systems.
Keywords
Ge-Si alloys; analogue-digital conversion; bipolar integrated circuits; digital-analogue conversion; local area networks; AD converters; DA converters; Ethernet systems; SiGe; SiGe bipolar technology; bit rate 100 Gbit/s; Circuits; Clocks; Data communication; Ethernet networks; Field programmable gate arrays; Germanium silicon alloys; High speed optical techniques; Prototypes; Sampling methods; Silicon germanium; ADC; Bipolar; DAC; Optical communications; SiGe;
fLanguage
English
Publisher
ieee
Conference_Titel
IEEE/LEOS Summer Topical Meetings, 2008 Digest of the
Conference_Location
Acapulco
ISSN
1099-4742
Print_ISBN
978-1-4244-1925-8
Electronic_ISBN
1099-4742
Type
conf
DOI
10.1109/LEOSST.2008.4590517
Filename
4590517
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