Title :
Cascaded low noise amplifier at 15 GHz for RF — Front end application
Author :
Kushairi, Norhapizin ; Rasmi, Amiza ; Sanusi, Rasidah ; Rahim, A.I.A.
Author_Institution :
TM Innovation Centre, Telekom Malaysia R&D Sdn Bhd, Cyberjaya, Malaysia
Abstract :
This paper present the design of 2-stage cascaded 15 GHz low noise amplifier (LNA) using 0.15 μm GaAs p-HEMT technology. At operating frequency of 15 GHz, this LNA is designed at 50 Ω input and output impedance matching. In this design, the active devices were selected from the depletion p-HEMT type with voltage supply of 3 V and DC bias of -0.2 V. The LNA has an input and output return loss at 26 dB and 23 dB respectively. Having a current consumption of 58 mA, this LNA achieves a small signal gain of 19.4 dB and noise figure is 1.4dB.
Keywords :
high electron mobility transistors; low noise amplifiers; low-power electronics; microwave amplifiers; GaAs p-HEMT technology; RF-front end application; active devices; current 58 mA; current consumption; depletion p-HEMT type; frequency 15 GHz; input impedance matching; noise figure 1.4 dB to 26 dB; output impedance matching; size 0.15 mum; two-stage cascaded low noise amplifier; voltage -0.2 V to 3 V; Gain; Impedance matching; Low-noise amplifiers; Noise; Noise figure; Radio frequency; Transistors; Cascade; GaAs p-HEMT; feedback; matching;
Conference_Titel :
Micro and Nanoelectronics (RSM), 2011 IEEE Regional Symposium on
Conference_Location :
Kota Kinabalu
Print_ISBN :
978-1-61284-844-0
DOI :
10.1109/RSM.2011.6088311
