Title :
FTIR, EPMA, Auger, and XPS analysis of impurity precipitates in CdS films
Author :
Webb, John D. ; Rose, Doug H. ; Niles, David W. ; Swartzlander, Amy ; Al-Jassim, Mowafak M.
Author_Institution :
Nat. Renewable Energy Lab., Golden, CO, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
Impurities in cadmium sulfide (CdS) films are a concern in the fabrication of copper (indium, gallium) diselenide (CIGS) and cadmium telluride (CdTe) photovoltaic devices. Films of CdS grown using chemical bath deposition (CBD) generally yield better devices than purer CdS films grown using vacuum deposition techniques, despite the higher impurity concentrations typically observed in the CBD CdS films. In this work, we present Fourier transform infrared (FTIR), Auger, electron microprobe (EPMA), X-ray photoelectron spectroscopic (XPS), and secondary ion mass spectroscopic (SIMS) analyses of the impurities in CBD CdS films, and show that these differ as a function of substrate type and film deposition conditions. We also show that some of these impurities exist as 102 micron-scale precipitates
Keywords :
Auger effect; Fourier transform spectroscopy; II-VI semiconductors; X-ray photoelectron spectra; cadmium compounds; coating techniques; electron probe analysis; impurities; infrared spectroscopy; secondary ion mass spectroscopy; semiconductor thin films; solar cells; Auger spectroscopy analysis; CdS; CdS films; CdTe; Cu(InGa)Se2; EPMA analysis; FTIR analysis; Fourier transform infrared analysis; SIMS; X-ray photoelectron spectroscopy; XPS analysis; chemical bath deposition; electron microprobe analysis; film deposition conditions; impurity precipitates; secondary ion mass spectroscopy; substrate type; thin film solar cells; Cadmium compounds; Chemicals; Copper; Fabrication; Gallium compounds; Impurities; Indium; Mass spectroscopy; Photovoltaic systems; Solar power generation;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654112