Large-area copper indium diselenide (CIS) process, control and manufacturing

Author

Gillespie, T.J. ; Lanning, B.R. ; Marshall, C.H. ; Contreras, M.

Author_Institution

Lockheed Martin Astronaut., Denver, CO, USA

fYear

1997

fDate

29 Sep-3 Oct 1997

Firstpage

403

Lastpage

406

Abstract

Lockheed Martin Astronautics (LMA) has developed a large-area (30×30 cm) sequential CIS manufacturing approach amenable to low-cost photovoltaics (PV) production. A prototype CIS manufacturing system has been designed and built with compositional uniformity (Cu/In ratio) verified within ±4 atomic percent over the 30×30 cm area. CIS device efficiencies have been measured by the National Renewable Energy Laboratory (NREL) at 7% on a flexible nonsodium-containing substrate and 10% on a soda-lime-silica (SLS) glass substrate. Critical elements of the manufacturing capability include the CIS sequential process selection, uniform large-area material deposition, and in-situ process control. Details of the process and large-area manufacturing approach are discussed and results presented

Keywords

copper compounds; indium compounds; process control; semiconductor thin films; solar cells; sputtered coatings; sputtering; ternary semiconductors; 10 percent; 30 cm; 7 percent; CIS device efficiencies; CuInSe₂; Lockheed Martin Astronautics; National Renewable Energy Laboratory; copper indium diselenide; flexible nonsodium-containing substrate; in-situ process control; large-area manufacturing; low-cost photovoltaics production; physical vapour deposition sputtering; sequential process selection; soda-lime-silica glass substrate; solar cells; uniform large-area material deposition; Atomic layer deposition; Computational Intelligence Society; Copper; Indium; Manufacturing processes; Manufacturing systems; Photovoltaic cells; Process control; Production; Prototypes;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE

Conference_Location

Anaheim, CA

ISSN

0160-8371

Print_ISBN

0-7803-3767-0

Type

conf

DOI

10.1109/PVSC.1997.654113

Filename

654113