DocumentCode :
2432635
Title :
Modification of dead layer on surfaces of CuInSe2 and its alloys
Author :
Menezes, S. ; Guillemoles, J.F. ; Canava, B. ; Vedel, J. ; Lincot, D.
Author_Institution :
InterPhases Res., Thousand Oaks, CA, USA
fYear :
1997
fDate :
29 Sep-3 Oct 1997
Firstpage :
411
Lastpage :
414
Abstract :
The efficiency of CuInSe2 or its alloy films, synthesized with selenization techniques, is often limited by the presence of a defective surface region, equivalent to a `dead layer´. Its presence is manifested by photocurrent losses in the short wavelength range. This paper explores some chemical and electrochemical surface treatments to eliminate or minimize the dead layer effect, using photocurrent spectral response to monitor the surface quality. Specific chemical treatments dramatically enhance the short wavelength response and device performance. Electrochemical treatments also improve the quantitative spectral output. But prolonged cathodic polarization has a deleterious effect on the quantum efficiency. Implications of the results to the performance of PV devices are discussed
Keywords :
copper compounds; electrochemistry; indium compounds; photoconductivity; polarisation; semiconductor thin films; solar cells; surface treatment; ternary semiconductors; CuInSe2; PV devices; alloy films; chemical surface treatment; defective surface region; electrochemical surface treatment; electrolytes; photocurrent losses; photocurrent spectral response; prolonged cathodic polarization; quantitative spectral output; quantum efficiency; selenization techniques; short wavelength range; solar cells; surface dead layer modification; surface quality monitoring; Chemicals; Computational Intelligence Society; Costs; Monitoring; Photoconductivity; Polarization; Semiconductor films; Shape; Surface treatment; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
ISSN :
0160-8371
Print_ISBN :
0-7803-3767-0
Type :
conf
DOI :
10.1109/PVSC.1997.654115
Filename :
654115
Link To Document :
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