DocumentCode
243265
Title
Temperature Dependent Spectral Response and Responsivity of GeSn Photoconductor on Si
Author
Conley, Benjamin R. ; Mosleh, Aboozar ; Ghetmiri, Seyed Amir ; Wei Du ; Naseem, Hameed ; Shui-Qing Yu ; Soref, Richard A. ; Sun, Guofa ; Tolle, John ; Margetis, Joe
Author_Institution
Dept. of Electr. Eng., Univ. of Arkansas, Fayetteville, AR, USA
fYear
2014
fDate
14-16 July 2014
Firstpage
219
Lastpage
220
Abstract
The spectral response and responsivity of a GeSn photoconductor were measured from 300 to 77 K. The maximum responsivity of 0.06 A/W was measured at 1550 nm for 10 volts bias at 140 K.
Keywords
germanium alloys; infrared spectra; photoconducting materials; tin alloys; GeSn; Si; photoconductor responsivity; temperature 300 K to 77 K; temperature dependent spectral response; voltage 10 V; wavelength 1550 nm; Photoconducting materials; Semiconductor device measurement; Silicon; Temperature dependence; Temperature measurement; Tin; Wavelength measurement; Photodetector; germanium; germanium alloys; tin alloys;
fLanguage
English
Publisher
ieee
Conference_Titel
Photonics Society Summer Topical Meeting Series, 2014 IEEE
Conference_Location
Montreal, QC
Print_ISBN
978-1-4799-2766-1
Type
conf
DOI
10.1109/SUM.2014.116
Filename
6903065
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