Operation principle of resonant tunneling THz oscillator at fixed bias voltages

Author

Zhao, P. ; Cui, H.L. ; Woolard, D.

Author_Institution

Dept. of Phys. & Eng. Phys., Stevens Inst. of Technol., Hoboken, NJ, USA

fYear

2000

fDate

22-25 May 2000

Firstpage

146

Lastpage

147

Abstract

Resonant tunneling THz oscillators are important in high frequency nanometer electronics. The existence of intrinsic high frequency current oscillations (IHFCO) in a double barrier quantum well system (DBQWS) at fixed bias voltages was numerically observed first by Jensen and Buot (1991). However, no credible explanation on the origin of IHFCO is available. In this paper, we present a complete and self-consistent explanation on the origin of IHFCO in a DBQWS. Our explanation is based on our time-dependent simulation of a DBQWS and the energy level coupling (ELC) model.

Keywords

quantum well devices; resonant tunnelling devices; submillimetre wave oscillators; bias voltage; double barrier quantum well system; energy level coupling model; high-frequency nanometer electronics; intrinsic high frequency current oscillations; resonant tunneling terahertz oscillator; time-dependent simulation; Current density; Damping; Energy states; Hysteresis; Physics; Quantum well devices; Resonance; Resonant tunneling devices; Voltage; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics, 2000. Book of Abstracts. IWCE Glasgow 2000. 7th International Workshop on

Conference_Location

Glasgow, UK

Print_ISBN

0-85261-704-6

Type

conf

DOI

10.1109/IWCE.2000.869967

Filename

869967