Title :
Properties of ZnTe:Cu thin films and CdS/CdTe/ZnTe solar cells
Author :
Tang, J. ; Mao, D. ; Ohno, T.R. ; Kaydanov, V. ; Trefny, J.U.
Author_Institution :
Dept. of Phys., Colorado Sch. of Mines, Golden, CO, USA
fDate :
29 Sep-3 Oct 1997
Abstract :
The effects of Cu doping and post-deposition annealing on the properties of ZnTe thin films and CdS/CdTe solar cells with the ZnTe:Cu/Au back contact were investigated. The structural, compositional and electrical properties of ZnTe films were studied systematically using X-ray diffraction (XRD), electron microprobe analysis, atomic force microscopy (AFM), electrical resistivity and Hall effect measurements. ZnTe films with Cu concentrations of 1-6 at. % were used successfully as a back contact layer, providing fill factors over 0.70. The stability of CdTe/ZnTe/Au cells under accelerated temperature stress tests was investigated. I-V and C-V measurements, scanning Auger electron spectroscopy (AES) and X-ray photoemission spectroscopy (XPS) were used to clarify possible degradation mechanisms. Significant Cu and Te diffusion into Au layer and Au diffusion into ZnTe were observed after annealing
Keywords :
Auger effect; Hall effect; II-VI semiconductors; X-ray diffraction; X-ray photoelectron spectra; annealing; atomic force microscopy; cadmium compounds; copper; electrical conductivity measurement; electron probe analysis; scanning electron microscopy; semiconductor device testing; semiconductor doping; semiconductor thin films; semiconductor-metal boundaries; solar cells; zinc compounds; C-V measurements; CdS-CdTe-ZnTe; CdS/CdTe/ZnTe solar cells; Hall effect measurements; I-V measurements; X-ray diffraction; X-ray photoemission spectroscopy; ZnTe:Cu; ZnTe:Cu thin films; ZnTe:Cu/Au back contact; accelerated temperature stress tests; atomic force microscopy; compositional properties; degradation mechanisms; diffusion; doping; electrical properties; electrical resistivity; electron microprobe analysis; fill factor; post-deposition annealing; scanning Auger electron spectroscopy; structural properties; Annealing; Atomic force microscopy; Atomic measurements; Contacts; Electrons; Force measurement; Gold; Photovoltaic cells; Transistors; Zinc compounds;
Conference_Titel :
Photovoltaic Specialists Conference, 1997., Conference Record of the Twenty-Sixth IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
0-7803-3767-0
DOI :
10.1109/PVSC.1997.654122
